absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 800 v i t(rms) r.m.s on-state current t c = 89 c 8.0 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 80/88 a i 2 t i 2 t 32 a 2 s p gm peak gate power dissipation 5.0 w p g(av) average gate power dissipation 0.5 w i gm peak gate current 2.0 a v gm peak gate voltage 10 v v iso isolation breakdown voltage(r.m.s.) a.c. 1 minute 1500 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c mass 2.0 g STF10A80 jan, 2007. rev. 0 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 8 a ) high commutation dv/dt isolation voltage ( v iso = 1500v ac ) general description this device is fully isolated pa ckage suitable for ac switching application, phase control app lication such as fan speed and temperature modulation control, lighting control and static switching relay. this device is approved to comply with applicable require- ments by underwriters laboratories inc. 2.t2 3.gate 1.t1 symbol ? ? ? to-220f ? 1/2 1 2 3 semiwell semiconductor bi-directional triode thyristor copyright@semiwell semiconductor co., ltd., all rights reserved.
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 2.0 ma v tm peak on-state voltage i t = 15 a, inst. measurement 1.6 v i + gt1 gate trigger current v d = 6 v, r l =10 ? 30 ma i - gt1 ? 30 i - gt3 ? 30 v + gt1 gate trigger voltage v d = 6 v, r l =10 ? 1.5 v v - gt1 ? 1.5 v - gt3 ? 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -4.0 a/ms, v d =2/3 v drm 10 v/ k i h holding current 15 ma r th(j-c) thermal impedance junction to case 3.7 c/w STF10A80 2/2
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